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Publication date: October 2007 SKL00030AED
PIN diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2SP050G
Silicon epitaxial planar type
For high frequency attenuator
Features
High performance forward current I
F
controlled forward dy-
namic resistance r
f
Small terminal capacitance C
t
Miniature package and surface mounting type
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
60 V
Forward current I
F
50 mA
Junction temperature T
j
150 °C
Storage temperature T
stg
55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 10 mA 1.0 V
Reverse current I
R
V
R
= 60 V 100 nA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 2.4 pF
Forward dynamic resistance r
f
I
F
= 10 mA, f = 100 MHz 5.5
Electrical Characteristics T
a
= 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Package
Code
SSMini2-F4
Pin Name
1: Anode
2: Cathode
Marking Symbol: 6P