UP0KG8DG
2 SJJ00402AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics T
a
= 25°C±3°C
SBD
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 200 mA 0.50 0.58 V
Reverse current I
R
V
R
= 10 V 0.1 1
mA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 25 pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA, I
rr
= 10 mA,
R
L
= 100 W
3 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 250 MHz
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3.
*
: t
rr
measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Tr2
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= -10 mA, I
E
= 0
-50
V
Collector-emitter voltage (Base open) V
CEO
I
C
= -2 mA, I
B
= 0
-50
V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= -50 V, I
E
= 0
- 0.1 mA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= -50 V, I
B
= 0
- 0.5 mA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= -6 V, I
C
= 0
- 0.1
mA
Forward current transfer ratio h
FE
V
CE
= -10 V, I
C
= -5 mA 80
Collector-emitter saturation voltage V
CE(sat)
I
C
= -10 mA, I
B
= - 0.3 mA
- 0.25
V
Output voltage high-level V
OH
V
CC
= -5 V, V
B
= - 0.5 V, R
L
= 1 kW
-4.9
V
Output voltage low-level V
OL
V
CC
= -5 V, V
B
= -3.5 V, R
L
= 1 kW
- 0.2
V
Input resistance R
1
-30%
47
+30%
kW
Resistance ratio R
1
/ R
2
0.8 1.0 1.2
Transition frequency f
T
V
CB
= -10 V, I
E
= 2 mA, f = 200 MHz 80 MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
